A CLASS K3878 MOSFET 2SK3878 Transistor TO-3P 9A 900V 3 Pin Leads N-Channel Field Effect Transistor K3878 Silicon N-Channel Power MOSFET Transistor

Description: 2SK3878 TO-3P 9A 900V N-Channel Field Effect
A CLASS K3878 MOSFET 2SK3878 Transistor TO-3P 9A 900V 3 Pin Leads N-Channel Field Effect Transistor K3878 Silicon N-Channel Power MOSFET Transistor

This is Silicon N-Channel MOS Field Effect Transistor.

Features for K3878:
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Specification:
Drain-source voltage : VDSS = 900 V
Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
Gate-source voltage : VGSS = ±30 V
Drain current DC : ID = 9, Pulse : IDP = 27 A
Drain power dissipation (Tc = 25°C) : PD = 150 W
Single pulse avalanche energy : EAS = 778 mJ
Avalanche current : IAR = 9 A
Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature : Tch = 150°C
Application:
1. Switching Regulator