Description: 2SB649A 2SB649 B649 649 PNP Transistor 120V 1.5A 20W Silicon Bipolar Power Transistors TO-126 Package
2SB649A 2SB649 B649 649 PNP Transistor 120V 1.5A 20W Silicon Bipolar Power Transistors Triode TO-126 Package Electronics Parts IC
Characteristics of 2SB649 Transistor
- Type –PNP
- Collector-Emitter Voltage:-120V
- Collector-Base Voltage:-180V
- Emitter-Base Voltage:-5V
- Collector Current:-1.5A
- Collector Dissipation –20W
- DC Current Gain (hfe) –60to320
- Transition Frequency –140MHz
- Operating and Storage Junction Temperature Range-55 to +150°C
- Package –TO-126
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